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Proceedings Paper

Grating-assisted resonant-cavity LEDs: toward thin film devices for heterogeneous integration
Author(s): Karuna Ghawana; Danae Delbeke; Ilse Christiaens; Steven Verstuyft; Roel G. Baets
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Paper Abstract

Design and fabrication of thin film GaAs Grating-Assisted Resonant-Cavity LEDs (GA-RCLED) emitting at 980 nm are reported. The devices are fabricated by gluing the sample and a transfer substrate with benzocyclobutene (BCB) and consequently thinning the sample. The design is optimised for a high extraction efficiency. The efficiency of substrate emitting planar RCLEDs is limited by leaky DBR modes. This quasi continuum of modes does not fall in the DBR stop band and is internally reflected at the semiconductor-air interface. Consequently, the leaky modes are absorbed in the substrate and are lost. The use of a thin film device can avoid this loss term. The laterally propagating mode can be recuperated by the use of a grating. The diffractive properties of the periodic grating can redirect the resonant guided mode to the extraction cone. The 2-D grating is defined on the surface of the thin film RCLED by means of holographic exposure. As the devices are thinned they are more compatible with wafer scale integration with electronic devices.

Paper Details

Date Published: 11 March 2003
PDF: 8 pages
Proc. SPIE 4947, Laser Diodes, Optoelectronic Devices, and Heterogenous Integration, (11 March 2003); doi: 10.1117/12.471984
Show Author Affiliations
Karuna Ghawana, Univ. Gent (Belgium)
Danae Delbeke, Univ. Gent (Belgium)
Ilse Christiaens, Univ. Gent (Belgium)
Steven Verstuyft, Univ. Gent (Belgium)
Roel G. Baets, Univ. Gent (Belgium)


Published in SPIE Proceedings Vol. 4947:
Laser Diodes, Optoelectronic Devices, and Heterogenous Integration

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