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Proceedings Paper

High-quality heavily strained II-VI quantum well
Author(s): Jie Li; Li He; Weiming Tang; W. Shan; Shixin Yuan
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Paper Abstract

Atomic layer epitaxy technique was successfully applied to grow CdTe-ZnTe multilayers on (001) GaAs substrate. A structure of (CdTe)m(ZnTe)n-ZnTe multiquantum wells was proposed and prepared, and characterized by x-ray diffraction, photoluminescence, and modulation reflection spectroscope. The high crystalline quality is mainly due to the reduction of misfit dislocations.

Paper Details

Date Published: 1 November 1991
PDF: 5 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47198
Show Author Affiliations
Jie Li, Shanghai Institute of Technical Physics (China)
Li He, Shanghai Institute of Technical Physics (China)
Weiming Tang, Shanghai Institute of Technical Physics (China)
W. Shan, Shanghai Institute of Technical Physics (China)
Shixin Yuan, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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