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Proceedings Paper

Study of the microstructures in Ar+ laser crystallized films of a-Si:H for active layer of thin film transistors
Author(s): Xinfan Huang; Xiang Dong Zhang; Wei Ying Zhu; YingYing Chen
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Paper Abstract

The structural and electrical properties of a-Si:H crystallized films obtained by the Ar+ laser scanning irradiation have been investigated by means of Raman scattering, X-ray diffraction, and conductivity-Hall measurement. For the liquid phase laser crystallized films (LP-LCR) the results show that the average grain size is about tens of micrometers and the preferential crystal orientation is in the direction of <111>. At room temperature the conductivity of crystallized films is 1.5 ((Omega) (DOT)cm)-1 and the Hall mobility of electrons is about 36 cm2/V(DOT)s.

Paper Details

Date Published: 1 November 1991
PDF: 5 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47191
Show Author Affiliations
Xinfan Huang, Nanjing Univ. (China)
Xiang Dong Zhang, Nanjing Univ. (China)
Wei Ying Zhu, Nanjing Univ. (China)
YingYing Chen, Nanjing Univ. (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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