Share Email Print
cover

Proceedings Paper

Interface properties of a-C:H/a-SiOx:H multilayer
Author(s): Jing Bao Cui; Wei Ping Zhang; Rong Chuan Fang; Changsui Wang; Guien Zhou; Jian Xin Wu
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The a-C:H/SiOx:H multilayers were prepared by rf magnetron sputtering. Small angle x- ray diffraction, Auger depth profile shows periodicity of the films very well. The interfacial roughness parameters (xi) determined by the x-ray diffraction is 0.49 nm, the interface width di obtained from Auger depth profile ranges from 0.78 nm to 1.1 nm. The infrared spectroscopy shows Si-C bond vibration absorption at interface.

Paper Details

Date Published: 1 November 1991
PDF: 4 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47189
Show Author Affiliations
Jing Bao Cui, Univ. of Science and Technology of China (China)
Wei Ping Zhang, Univ. of Science and Technology of China (China)
Rong Chuan Fang, Univ. of Science and Technology of China (China)
Changsui Wang, Univ. of Science and Technology of China (China)
Guien Zhou, Univ. of Science and Technology of China (China)
Jian Xin Wu, Univ. of Science and Technology of China (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

© SPIE. Terms of Use
Back to Top