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Proceedings Paper

Circuit simulation of RTD and HPT monolithic optoelectronic integration
Author(s): PingJuan Niu; Weilian Guo; Hui-lai Liang; Shilin Zhang; Chang-yun Miao; Jin-hai Wang; Hai-Tao Qi
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Paper Abstract

We first proposed monolithic optoelectronic integration of Resonant Tunneling Diode (RTD) and Heterojunction Bipolar Phototransistor (HPT). Circuit simulations using simple models of RTD and HPT successfully produced the optoelectronic bistable characteristics of RTD and HPT Negative Differential Resistance (NDR) device. The basic operation mechanism of Photoelectric Monostable-Bistable Transition Logic Elements (PMOBILE's) by utilizing the functionality of two series-connected RTDs in combination with HPT is also demonstrated by simulation.

Paper Details

Date Published: 20 September 2002
PDF: 3 pages
Proc. SPIE 4919, Advanced Materials and Devices for Sensing and Imaging, (20 September 2002); doi: 10.1117/12.471885
Show Author Affiliations
PingJuan Niu, Tianjin Polytechnic Univ. (China)
Weilian Guo, Tianjin Univ. (China)
Hui-lai Liang, Tianjin Univ. (China)
Shilin Zhang, Tianjin Univ. (China)
Chang-yun Miao, Tianjin Polytechnic Univ. (China)
Jin-hai Wang, Tianjin Polytechnic Univ. (China)
Hai-Tao Qi, Tianjin Univ. (China)


Published in SPIE Proceedings Vol. 4919:
Advanced Materials and Devices for Sensing and Imaging
Jianquan Yao; Yukihiro Ishii, Editor(s)

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