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Proceedings Paper

Nonlinear opto-isolator with response persistence function
Author(s): Weilian Guo; Shilin Zhang; Peining Zhang; Luhong Mao; Jan Zhou
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Paper Abstract

By encapsulating a light emitting diode (LED) with a Silicon photo-negative resistance Device face to face in a hermetic package, a new type opto-isolator has been developed. Because of the features of Bistability and self-latching on the silicon photo-negative resistance devices, these non-linear opto-isolators present the response persistence function for the input signal. In this paper, the demonstration of response persistance function on PDUBAT type of silicon photo-negative resistance device has been made experimentally. The Dual Base Transistor (DUBAT) is a three terminals Voltage controlled negative resistance device, it is composed from the combination of a pnp type lateral bipolar transistor and a npn type vertical bipolar transistor. As DUBAT is radiated by light, the npn bipolar transistor is taken as a phototransistor. Thus the DUBAT will become a photo-DUBAT or PDUBAT. In PDUBAT, it is found that the photo-controlled "S" negative resistance characteristic can introduce a photo-controlled current switching effect and the persistance response functions, which keeps the response state for the input light signal until the reset signal changes the circuit from maintaining state to waiting state.

Paper Details

Date Published: 20 September 2002
PDF: 4 pages
Proc. SPIE 4919, Advanced Materials and Devices for Sensing and Imaging, (20 September 2002); doi: 10.1117/12.471881
Show Author Affiliations
Weilian Guo, Tianjin Univ. (China)
Shilin Zhang, Tianjin Univ. (China)
Peining Zhang, Tianjin Univ. (China)
Luhong Mao, Tianjin Univ. (China)
Jan Zhou, Tianjin Univ. (China)


Published in SPIE Proceedings Vol. 4919:
Advanced Materials and Devices for Sensing and Imaging
Jianquan Yao; Yukihiro Ishii, Editor(s)

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