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Studies of InSb metal oxide semiconductor structure fabricated by photo-CVD using Si2H6 and N2O
Author(s): C. J. Huang; Yan-Kuin Su; R. L. Leu
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Paper Abstract

Silicon oxide films (SiOx, O2H6) with nitrous oxide (N2O) at temperature below 200 degree(s)C using 2537 A ultraviolet (UV) light. Ellipsometric studies prove that the refractive index and etching rate of the photo-oxide depend on the substrate temperatures and gas ratio. Composition and electrical properties of the interface (SiOx/InSb) are discussed by using Auger electron spectroscopy (AES) and metal-oxide-semiconductor capacitors. Hysteresis free capacitance- voltage (C-V) characteristics measured at 77 K are attained and the minimum interface state density is only 1.5 X 1011 cm-2eV-1.

Paper Details

Date Published: 1 November 1991
PDF: 4 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47183
Show Author Affiliations
C. J. Huang, National Cheng Kung Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
R. L. Leu, National Cheng Kung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang, Editor(s)

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