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Proceedings Paper

Condensation mechanisms and properties of rf-sputtered a-Si:H
Author(s): Valerie A. Ligachov; V. A. Filikov; V. N. Gordeev
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Paper Abstract

The article is devoted to the influence of the technological parameters on the electrical and optical properties of a-Si:H analysis on the basis of a recently developed approach. It is shown that the region of critical values of deposition parameters Ts and Ph exists. In the vicinity of this region the alteration condensation mechanism of different SiHm (m equals 0,1,2,3) complexes is observed. The critical values separate the preparation conditions of two different types of a-Si:H material and correspond to non-equilibrium 'phase-transition.' The origin of 'pseudo doping effect' is discussed.

Paper Details

Date Published: 1 November 1991
PDF: 6 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47181
Show Author Affiliations
Valerie A. Ligachov, Moscow Power Engineering Institute (Russia)
V. A. Filikov, Moscow Power Engineering Institute (Russia)
V. N. Gordeev, Moscow Power Engineering Institute (Russia)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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