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Proceedings Paper

128 x 128 MWIR InSb focal plane and camera system
Author(s): William J. Parrish; John D. Blackwell; Robert C. Paulson; Harold Arnold
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Paper Abstract

The need for increased resolution and sensitivity in IR systems applications has provided the impetus for the development of high-performance second-generation staring focal plane array technology. Previously, the availability of these focal plane array components has been limited and the costs associated with delivery of useful hardware have been high. Utilizing proven InSb detector technology and foundry silicon CMOS processes, a high performance, affordable hybrid focal plane array and support electronics system has been developed. The 128 X 128 array of photovoltac InSb detectors on 50 micrometers centers is interfaced with the silicon readout by aligning and cold welding indium bumps on each detector with the corresponding indium bump on the silicon readout. The detector is then thinned so that it can be illuminated through the backside. The 128 X 128 channel signal processing integrated circuit performs the function of interfacing with the detectors, integrating the detector current, and multiplexing the signals. It is fabricated using a standard double poly, single metal, p-well CMOS process. The detector elements achieve a high quantum efficiency response from less than 1 micrometers to greater than 5 micrometers with an optical fill factor of 90%. The hybrid focal plane array can operate to a maximum frame rate of 1,000 Hz. D* values at 1.7 X 1014 photons/cm2/sec illumination conditions approach the BLIP value of 9.4 X 1011 cm(root)Hz/W with a capacity of 4 X 107 carriers and a dynamic range of greater than 60,000. A NE(Delta) T value of .018 C and a MRT value of .020 C have been measured. The devices operate with only 3 biases and 3 clocks.

Paper Details

Date Published: 1 September 1991
PDF: 10 pages
Proc. SPIE 1512, Infrared and Optoelectronic Materials and Devices, (1 September 1991); doi: 10.1117/12.47173
Show Author Affiliations
William J. Parrish, Amber Engineering, Inc. (United States)
John D. Blackwell, Amber Engineering, Inc. (United States)
Robert C. Paulson, Amber Engineering, Inc. (United States)
Harold Arnold, Amber Engineering, Inc. (United States)


Published in SPIE Proceedings Vol. 1512:
Infrared and Optoelectronic Materials and Devices
Ahmed Naumaan; Carlo Corsi; Joseph M. Baixeras; Alain J. Kreisler, Editor(s)

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