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Proceedings Paper

Intrinsic carrier concentration and effective masses in Hg1-xMnxTe
Author(s): Antoni Rogalski
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Paper Abstract

The intrinsic carrier concentration, electron effective mass ratio, and the reduced Fermi energy are calculated for Hg1-xMnxTe with 0.08 YLD (DOT) pYLD method (Kane model). By fitting the calculated nonparabolic ni values to the expression for parabolic bands, the following approximation for the intrinsic carrier concentration has been obtained: ni equals (4.615 - 1.59x + 0.00264T - 0.0170xT + 34.15x2)1014E3/4T3/2exp(-5802Eg/T) in cm-3, where Eg is in eV.

Paper Details

Date Published: 1 September 1991
PDF: 6 pages
Proc. SPIE 1512, Infrared and Optoelectronic Materials and Devices, (1 September 1991); doi: 10.1117/12.47161
Show Author Affiliations
Antoni Rogalski, Institute of Technical Physics (Poland)


Published in SPIE Proceedings Vol. 1512:
Infrared and Optoelectronic Materials and Devices
Ahmed Naumaan; Carlo Corsi; Joseph M. Baixeras; Alain J. Kreisler, Editor(s)

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