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Proceedings Paper

Metal-organic molecular beam epitaxy of II-VI materials
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Paper Abstract

A brief review is given of the development of a metalorganic molecular beam epitaxial system for Hg-based II-VI semiconductors. Recent results on the growth of HgZnTe, HgCdTe, and iodine-doped CdTe epitaxial layers are presented and demonstrate the potential of this technique for the growth of high-quality materials.

Paper Details

Date Published: 1 September 1991
PDF: 7 pages
Proc. SPIE 1512, Infrared and Optoelectronic Materials and Devices, (1 September 1991); doi: 10.1117/12.47159
Show Author Affiliations
Christopher J. Summers, Georgia Tech Research Institute (United States)
Brent K. Wagner, Georgia Tech Research Institute (United States)
Rudolph G. Benz, Georgia Tech Research Institute (United States)
Rajesh D. Rajavel, Georgia Tech Research Institute (United States)


Published in SPIE Proceedings Vol. 1512:
Infrared and Optoelectronic Materials and Devices
Ahmed Naumaan; Carlo Corsi; Joseph M. Baixeras; Alain J. Kreisler, Editor(s)

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