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Proceedings Paper

PbEuSeTe/Pb1-xSnxTe buried heterostructure diode lasers grown by molecular beam epitaxy
Author(s): Ze'ev Feit; D. Kostyk; R. J. Woods; Paul S. Mak
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Paper Abstract

Buried heterostructure (BH) PbSnTe lasers were prepared in a two-stage MBE growth. Lasers with Pb1-xSnxTe (xequals0; 0.04; 0.05; 0.068; 0.095) buried active layer and a buried quantum well (BQW) Pb0.932Sn0.068Te active layers have been manufactures. A maximum continuous wave operating temperature of 203 K was recorded for a lattice matched PbTe active layer BH laser, and a maximum operating temperature of 189 K was recorded for the BQW laser.

Paper Details

Date Published: 1 September 1991
PDF: 6 pages
Proc. SPIE 1512, Infrared and Optoelectronic Materials and Devices, (1 September 1991); doi: 10.1117/12.47158
Show Author Affiliations
Ze'ev Feit, Laser Photonics, Inc. (United States)
D. Kostyk, Laser Photonics, Inc. (United States)
R. J. Woods, Laser Photonics, Inc. (United States)
Paul S. Mak, Laser Photonics (United States)

Published in SPIE Proceedings Vol. 1512:
Infrared and Optoelectronic Materials and Devices
Ahmed Naumaan; Carlo Corsi; Joseph M. Baixeras; Alain J. Kreisler, Editor(s)

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