Proceedings Paper
Gallium arsenide photoaddressed infrared liquid crystal spatial light modulator| Format | Member Price | Non-Member Price |
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Paper Abstract
Detailed description of the structure, operation, fabrication, and performance of a fast-response metal-insulator-semiconductor structure mono-crystalline gallium arsenide as photo-addressing medium for infrared liquid crystal spatial light modulator (GaAs-IR-SLM) is reported. A GaAs-IR-SLM is demonstrated with a limiting resolution of 20 lp/mm over a 40 mm aperture and contrast ratios of greater than 20:1 in the 8 to approximately 12 μm wavelength.
Paper Details
Date Published: 20 September 2002
PDF: 6 pages
Proc. SPIE 4919, Advanced Materials and Devices for Sensing and Imaging, (20 September 2002); doi: 10.1117/12.470953
Published in SPIE Proceedings Vol. 4919:
Advanced Materials and Devices for Sensing and Imaging
Jianquan Yao; Yukihiro Ishii, Editor(s)
PDF: 6 pages
Proc. SPIE 4919, Advanced Materials and Devices for Sensing and Imaging, (20 September 2002); doi: 10.1117/12.470953
Show Author Affiliations
JiaoBo Gao, Xi'an Institute of Applied Optics (China)
Jun Wang, Xi'an Institute of Applied Optics (China)
Jilong Wang, Xi'an Institute of Applied Optics (China)
Jun Wang, Xi'an Institute of Applied Optics (China)
Jilong Wang, Xi'an Institute of Applied Optics (China)
HuiLing Chen, Xi'an Institute of Applied Optics (China)
Ling Ma, Xi'an Institute of Applied Optics (China)
WeiNa Wang, Xi'an Institute of Optics and Precision Mechanics (China)
Ling Ma, Xi'an Institute of Applied Optics (China)
WeiNa Wang, Xi'an Institute of Optics and Precision Mechanics (China)
Published in SPIE Proceedings Vol. 4919:
Advanced Materials and Devices for Sensing and Imaging
Jianquan Yao; Yukihiro Ishii, Editor(s)
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