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Proceedings Paper

1300-nm GaAs-based vertical-cavity lasers
Author(s): Mattias Hammar; Carl Asplund; Petrus Sundgren; Sebastian Mogg; Ulf Christiansson; Thomas Aggerstam; Vilhelm Oscarsson; Christine Runnstroem; Elsy Oedling; Jessica Malmquist
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Paper Abstract

We compare GaInNAs and highly strained InGaAs quantum-wells (QWs) for applications in metal-organic vapor-phase epitaxy (MOVPE)-grown GaAs-based 1300-nm vertical-cavity lasers (VCLs). While the peak wavelength of InGaAs QWs can be extended by a small fraction of N, the luminescence efficiency degrades strongly with wavelength. On the other hand, using highly strained InGaAs QWs in combination with a large VCL detuning it is also possible to push the emission wavelength towards 1.3 μm. The optimized MOVPE growth conditions for such QW and VCL structures are discussed in some detail. It is noted that GaInNAs and InGaAs QWs preferably are grown at low temperature, but with quite different V/III ratios and growth rates. We also point out the importance of reduced doping concentration and growth temperature of the n-doped bottom DBR to minimize optical loss and for compatibility with GaInNAs QWs. InGaAs VCLs with emission wavelength beyond 1260 nm is demonstrated. This includes mW-range output power, mA-range threshold current and 10 Gb/s data transmission.

Paper Details

Date Published: 15 April 2003
PDF: 13 pages
Proc. SPIE 4942, VCSELs and Optical Interconnects, (15 April 2003); doi: 10.1117/12.470815
Show Author Affiliations
Mattias Hammar, Zarlink Semiconductor, Inc. (Sweden)
Royal Institute of Technology (Sweden)
Carl Asplund, Royal Institute of Technology (Sweden)
Petrus Sundgren, Royal Institute of Technology (Sweden)
Sebastian Mogg, Royal Institute of Technology (Sweden)
Ulf Christiansson, Zarlink Semiconductor, Inc. (Sweden)
Thomas Aggerstam, Zarlink Semiconductor, Inc. (Sweden)
Vilhelm Oscarsson, Zarlink Semiconductor, Inc. (Sweden)
Christine Runnstroem, Zarlink Semiconductor, Inc. (Sweden)
Elsy Oedling, Zarlink Semiconductor, Inc. (Sweden)
Jessica Malmquist, Zarlink Semiconductor, Inc. (Sweden)


Published in SPIE Proceedings Vol. 4942:
VCSELs and Optical Interconnects

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