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Proceedings Paper

Laser induced diffusible resistance: device characterization and process modeling
Author(s): Michel Meunier; Maxime Cadotte; Mathieu Ducharme; Yves Gagnon; Alain Lacourse
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Paper Abstract

Highly accurate resistances can be made by iteratively laser inducing diffusion of dopants from the drain and source of a gateless field effect transistor into the channel, thereby forming an electrical link between two adjacent p-n junction diodes. We show that the current-voltage characteristics of these new microdevices are linear at low voltages and sublinear at higher voltages where carrier mobility is affected by the presence of high fields. A process model is proposed involving the calculation of the laser melted region in which the dopant diffusion occurs. Experimental results are well described by the proposed model.

Paper Details

Date Published: 18 June 2002
PDF: 7 pages
Proc. SPIE 4637, Photon Processing in Microelectronics and Photonics, (18 June 2002); doi: 10.1117/12.470672
Show Author Affiliations
Michel Meunier, Ecole Polytechnique de Montreal and LTRIM-Technologies (Canada)
Maxime Cadotte, Ecole Polytechnique de Montreal (Canada)
Mathieu Ducharme, Ecole Polytechnique de Montreal (Canada)
Yves Gagnon, LTRIM-Technologies (Canada)
Alain Lacourse, LTRIM-Technologies (Canada)

Published in SPIE Proceedings Vol. 4637:
Photon Processing in Microelectronics and Photonics
Jan J. Dubowski; Koji Sugioka; Malcolm C. Gower; Willem Hoving; Richard F. Haglund Jr.; Alberto Pique; Frank Traeger; Jan J. Dubowski; Willem Hoving, Editor(s)

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