Share Email Print
cover

Proceedings Paper

Simulation of hot-electron effect in negative-electron-affinity GaN pn junction diodes
Author(s): Hamid Z. Fardi; Gita Alaghband
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A drift-diffusion device simulation model that includes energy balance equations is used for studying hot electron effect in Negative Electron Affinity (NEA) GaN pn junction diodes. Our modeling is focused on the temperature distribution of electrons prior to being emitted into vacuum where electrons have either thermalized to the lattice temperature in the band-bending region of the p-type electrode; or it is possible that some of these electrons emitted are hot. SimWindows, is used as a device modeling program for this study. We calculate electron temperature distributions and hot/cold electron density profiles in a GaN pn junction diode. Hot electron effect is modeled by Stratton's energy balance equations. A constant carrier energy lifetime is used for the electron energy loss mechanism in the interaction of electrons with lattice phonons. Our simulation results show that energy relaxation lifetime is the deciding parameter for electrons losing their energy to the lattice in the band bending region of the p-type GaN.

Paper Details

Date Published: 12 June 2002
PDF: 9 pages
Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470563
Show Author Affiliations
Hamid Z. Fardi, Univ. of Colorado/Denver (United States)
Gita Alaghband, Univ. of Colorado/Denver (United States)


Published in SPIE Proceedings Vol. 4646:
Physics and Simulation of Optoelectronic Devices X
Peter Blood; Marek Osinski; Yasuhiko Arakawa, Editor(s)

© SPIE. Terms of Use
Back to Top