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Proceedings Paper

Effects of resonant mode coupling on near- and far-field characteristics of InGaN-based lasers
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Paper Abstract

The phenomenon of resonant mode coupling is modeled and numerically investigated in InGaN-based multiple-quantum- well laser structures. It is shown that under resonant conditions the internal mode coupling can lead to severe distortions of both near- and far-field characteristics. Taking into account the carrier-induced change of the modal effective index for the lasing mode, we show that the resonant internal mode coupling can result in a strongly nonlinear dependence of the modal gain on injection current, with possible region of negative differential modal gain.

Paper Details

Date Published: 12 June 2002
PDF: 11 pages
Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470562
Show Author Affiliations
Gennady A. Smolyakov, CHTM/Univ. of New Mexico (United States)
Petr Georgievich Eliseev, CHTM/Univ. of New Mexico and P.N. Lebedev Physical Institute (United States)
Marek Osinski, CHTM/Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 4646:
Physics and Simulation of Optoelectronic Devices X
Peter Blood; Marek Osinski; Yasuhiko Arakawa, Editor(s)

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