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Proceedings Paper

1.3-um edge- and surface-emitting quantum dot lasers grown on GaAs substrates
Author(s): Victor M. Ustinov; Alexey E. Zhukov; Nikolay A. Maleev; Anton Yu. Egorov; Alexey R. Kovsh; Sergei S. Mikhrin; Nikolai A. Cherkashin; Yuri M. Shernyakov; Mikhail V. Maximov; Anrei Tsatsul'nikov; Nikolai N. Ledentsov; Zhores I. Alferov; James A. Lott; Dieter Bimberg
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Paper Abstract

The development of 1.3 micron VCSELs is currently considered to give a strong impulse for a wide use of ultra-fast local area networks. In the present work we discuss MBE growth and characteristics of InAs/GaAs quantum dot (QD) lasers, we also give characteristics of 1.3 micron QD VCSELs grown on GaAs and compare them with those of 1.3 micron InGaAsN/GaAs QW VCSELs. Overgrowing the InAs quantum dot array with thin InGaAs layer allows us to achieve 1.3 micron emission. Long stripe lasers showed low threshold current density (<100 A/cm2), high differential efficiency (>50%), and low internal loss (1-2 cm-1). Maximum continuous wave (CW) output power for wide stripe lasers was as high as 2.7 W and 110 mW for single mode devices. Uncoated broad area lasers showed no visible degradation of characteristics during 450 hours (60C, ambient environment). 1.3 micron InGaAsN/GaAs QW VCSELs are characterized by higher optical loss and lower differential efficiency than QD VCSELs. Due to high gain in the active region QW VCSELS demonstrate high output power (1 mW). QW VCSELs show extremely low internal round-trip optical loss (<0.05%), low threshold currents (<2 mA), high differential efficiency (40%) and output power (600 microW).

Paper Details

Date Published: 12 June 2002
PDF: 13 pages
Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470541
Show Author Affiliations
Victor M. Ustinov, A.F. Ioffe Physico-Technical Institute (Russia)
Alexey E. Zhukov, A.F. Ioffe Physico-Technical Institute (Russia)
Nikolay A. Maleev, A.F. Ioffe Physico-Technical Institute (Russia)
Anton Yu. Egorov, A.F. Ioffe Physico-Technical Institute (Russia)
Alexey R. Kovsh, A.F. Ioffe Physico-Technical Institute (Russia)
Sergei S. Mikhrin, A.F. Ioffe Physico-Technical Institute (Russia)
Nikolai A. Cherkashin, A.F. Ioffe Physico-Technical Institute (Russia)
Yuri M. Shernyakov, A.F. Ioffe Physico-Technical Institute (Russia)
Mikhail V. Maximov, A.F. Ioffe Physico-Technical Institute (Russia)
Anrei Tsatsul'nikov, A.F. Ioffe Physico-Technical Institute (Russia)
Nikolai N. Ledentsov, A.F. Ioffe Physico-Technical Institute (Germany)
Zhores I. Alferov, A.F. Ioffe Physico-Technical Institute (Russia)
James A. Lott, Air Force Institute of Technology (United States)
Dieter Bimberg, Technische Univ. Berlin (Germany)


Published in SPIE Proceedings Vol. 4646:
Physics and Simulation of Optoelectronic Devices X
Peter Blood; Marek Osinski; Yasuhiko Arakawa, Editor(s)

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