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Proceedings Paper

Fabrication and characterization of laterally coupled lasers
Author(s): Stefan McMurtry; Jean-Pierre Vilcot; Francis Mollot; Didier J. Decoster
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Paper Abstract

Twin stripes laser diodes emitting at 1.3 micrometers are presented. The InP based devices were fabricated using a GaInAsP based quantum well structure. The technological processes included wet etching and photolithography that allowed a good control of the heights of the laser. The top electrodes were obtained by e-beam lithography giving sufficient resolution to allow the fabrication of twin stripe lasers with an inter ridge space from 1 to 10 microns. The wet etch solutions were H3PO4/H2O2/H2O for the top GaInAs layer and H3PO4/HCL for the InP layer, the first has the advantage of being selective on InP. The final top electrodes were deposited also by e-beam lithography over a BCB insulating layer. The final laser chips showed to be effective in power (8 mW per stripe) and had a typical threshold of 40 mA. Optical and electrical coupling were investigated and showed that both were present in the lasers. The electrical coupling phenomena results in the modification of the slope and the threshold of the P(I) function when the second laser is biased while the optical coupling is demonstrated by a coupling of light in the waveguide of the second laser (shorted) while the first one is biased.

Paper Details

Date Published: 12 June 2002
PDF: 8 pages
Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470536
Show Author Affiliations
Stefan McMurtry, Univ. des Sciences et Technologies de Lille (France)
Jean-Pierre Vilcot, Univ. des Sciences et Technologies de Lille (France)
Francis Mollot, Univ. des Sciences et Technologies de Lille (France)
Didier J. Decoster, Univ. des Sciences et Technologies de Lille (France)

Published in SPIE Proceedings Vol. 4646:
Physics and Simulation of Optoelectronic Devices X
Peter Blood; Marek Osinski; Yasuhiko Arakawa, Editor(s)

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