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Proceedings Paper

Simulation of temperature-dependent modulation response in multi-quantum-well lasers
Author(s): Bernd Witzigmann; Mark S. Hybertsen
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Paper Abstract

The modulation response of a diode laser for telecommunications applications is a critical performance metric for high speed operation. In particular, for uncooled laser applications, the temperature sensitivity can by quite important. We have done microscopic calculations for 1.3 micrometers InGaAsP and InGaAlAs based quantum well laser designs using an integrated laser simulator. The simulator includes the normal carrier transport, the bound carrier populations in each well, the gain from the quantum wells, the optical fields and the stimulated emission self consistently for each bias condition of the device. In particular, the quantum wells are explicitly treated, including the quantum mechanical calculation of the bound levels, the density of states and the gain. With the inclusion of temperature dependent Auger recombination the details of the temperature sensitivity of the laser characteristics is well modeled. The final modulation response of the laser diodes depends both on the intrinsic quantum well gain characteristics and on the transport of carriers through the multi-quantum well active region of the diode. A compact model of the dynamic laser response must account for the impact of the transport.

Paper Details

Date Published: 12 June 2002
PDF: 7 pages
Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470530
Show Author Affiliations
Bernd Witzigmann, Agere Systems (United States)
Mark S. Hybertsen, Agere Systems (United States)

Published in SPIE Proceedings Vol. 4646:
Physics and Simulation of Optoelectronic Devices X
Peter Blood; Marek Osinski; Yasuhiko Arakawa, Editor(s)

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