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Proceedings Paper

Carrier capture times in 1.3-micron materials: GaInNAs, InGaAsP, and InGaAlAs semiconductor quantum well lasers
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Paper Abstract

A fully microscopic model is used to calculate the carrier capture times in quantum-well lasers operating at wavelengths in the 1.3 micrometers regime. The capture times are shown to be crucially dependent on the carrier confinement and therefore on the well and barrier materials. For a common well width of 6nm the capture times in InP/InGaAlAs and InP/InGaAsP structures are found to be in the 5ps range, whereas about a factor of ten longer times are predicted in GaInNAs/GaAs. By lowering the barriers using GaInNAs instead of pure GaAs or widening the well capture times similar to those in the InP-based structures can be obtained in the GaInNAs-based structures.

Paper Details

Date Published: 12 June 2002
PDF: 6 pages
Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470527
Show Author Affiliations
Joerg Hader, Univ. of Arizona (United States)
Jerome V. Moloney, Univ. of Arizona (United States)
Stephan W. Koch, Philipps-Univ. Marburg (Germany)

Published in SPIE Proceedings Vol. 4646:
Physics and Simulation of Optoelectronic Devices X
Peter Blood; Marek Osinski; Yasuhiko Arakawa, Editor(s)

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