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Proceedings Paper

Gain and photoluminescence in semiconductor lasers
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Paper Abstract

A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated. A fully microscopic model for the calculation of optical properties is coupled to a drift diffusion model for the mesoscopic charge and electric field distributions to calculate photo-luminescence and gain spectra in barrier-doped semiconductor laser material. Analyzing experiments on an optically pumped multi quantum-well structure it is demonstrated that the electric fields arising from the space charges of ionized dopants contribute to strongly excitation dependent optical properties, such as significant shifts of the luminescence versus peak gain wavelengths.

Paper Details

Date Published: 12 June 2002
PDF: 7 pages
Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470523
Show Author Affiliations
Joerg Hader, Univ. of Arizona (United States)
Stephan W. Koch, Philipps-Univ. Marburg (Germany)
Aramais R. Zakharian, Univ. of Arizona (United States)
Jerome V. Moloney, Univ. of Arizona (United States)
James E. Ehret, Air Force Research Lab. (United States)
Thomas R. Nelson, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 4646:
Physics and Simulation of Optoelectronic Devices X
Peter Blood; Marek Osinski; Yasuhiko Arakawa, Editor(s)

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