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Proceedings Paper

Advances in 1300-nm InGaAsN quantum well VCSELs
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Paper Abstract

Improvements in the performance of InGaAsN quantum well VCSELs operating near 1300 nm are reported. The effects of alloy composition on the photoluminescence intensity, linewidth, and anneal-induced wavelength blueshift of molecular beam epitaxial InGaAsN quantum wells are detailed. VCSELs employing a conventional p-n diode structure are demonstrated and compared to devices using two n-type DBR mirrors and an internal tunnel diode. Room-temperature differential efficiencies as high as 0.24 W/A, output powers of 2.1 mW, and a maximum CW operating temperature as high as 105 degree(s)C have all been demonstrated in these devices.

Paper Details

Date Published: 12 June 2002
PDF: 8 pages
Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470509
Show Author Affiliations
John F. Klem, Sandia National Labs. (United States)
D. K. Serkland, Sandia National Labs. (United States)
Kent M. Geib, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 4646:
Physics and Simulation of Optoelectronic Devices X
Peter Blood; Marek Osinski; Yasuhiko Arakawa, Editor(s)

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