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Proceedings Paper

Modeling the optoelectronic mixing effect in metal-semiconductor-metal detectors
Author(s): Keith Aliberti; Hongen Shen; Michael R. Stead; William C. Ruff; Barry L. Stann
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Paper Abstract

The optoelectronic mixing effect in metal-semiconductor-metal photodetectors (MSM-PDs) is studied. Numerical results, using the Scharfetter-Gummel scheme, are presented for gallium-arsenide (GaAs) MSM-PDs with different donor concentrations and analytical results are presented for devices with high background donor concentration operating below the flat-band condition and for low background donor concentration operating above the flat-band condition. MSM-PDs with unequal Schottky barrier heights at the electrodes (asymmetric MSM-PDs) are also studied. We find that asymmetric detectors exhibit asymmetric dc characteristics with the photocurrent asymmetry opposite to the dark-current asymmetry. We also find that the mixing efficiency of the MSM-PD increases with increase in applied ac voltage and decreases with increase in ac frequency. For asymmetric detectors, a rectification current exists even under zero mean ac bias that varies not only with ac voltage and optical power but also with ac-bias frequency. The theoretical results agree with observed experimental results.

Paper Details

Date Published: 12 June 2002
PDF: 10 pages
Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470508
Show Author Affiliations
Keith Aliberti, Army Research Lab. (United States)
Hongen Shen, Army Research Lab. (United States)
Michael R. Stead, Army Research Lab. (United States)
William C. Ruff, Army Research Lab. (United States)
Barry L. Stann, Army Research Lab. (United States)

Published in SPIE Proceedings Vol. 4646:
Physics and Simulation of Optoelectronic Devices X
Peter Blood; Marek Osinski; Yasuhiko Arakawa, Editor(s)

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