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Proceedings Paper

High-speed and high-efficiency AlInAs/GaInAs waveguide photodetectors for use in 40-Gbps applications
Author(s): Toshitaka Torikai; Takeshi Nakata; Takeshi Takeuchi; Kikuo Makita
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Paper Abstract

A separated-absorption-and-multiplication (SAM) AlInAs/GaInAs waveguide avalanche photodiode (APD) has been developed for 40-Gbps receivers. It has the widest bandwidth of 30-35 GHz and a gain-bandwidth product of 140-180 GHz, as a result of its small waveguide mesa structure and a thin 0.1micrometers thick avalanche layer. Preliminary results show the highest 10-Gbps sensitivity ever reported: -28.8 dBm at a bit-error-rate of 10-9. This waveguide APD is a candidate for 40-Gbps applications as a cost-effective super-efficient photodetector.

Paper Details

Date Published: 12 June 2002
PDF: 7 pages
Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); doi: 10.1117/12.470506
Show Author Affiliations
Toshitaka Torikai, NEC Corp. (Japan)
Takeshi Nakata, NEC Corp. (Japan)
Takeshi Takeuchi, NEC Corp. (Japan)
Kikuo Makita, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 4646:
Physics and Simulation of Optoelectronic Devices X
Peter Blood; Marek Osinski; Yasuhiko Arakawa, Editor(s)

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