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Proceedings Paper

Ultra-low voltage organic light-emitting diodes based on PiN structures
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Paper Abstract

We demonstrate an efficient organic electroluminescent devices with p-i-n structure. Anamorphous starburst, 4,4',4'-tris(3-methylphenylphenylamino)triphenylamine doped with a strong organic acceptor, tetrafluoro-tetracyano- quinodimethane serves as the p-type hole transport layer, and 4,7-diphenyl-1, 10-phenanthroline doped with Li as the n-type electron transport layer. A breakthrough is achieved in the performances of device based on pure 8-tris- hydroxyquinoline as an emitter: 100cd/m2 at 2.52V, 1,000cd/m2 at 2.9V and the maximum luminance and efficiency reach 66,000cd/m2 and 5.25 cd/A, respectively. The efficiency can be kept above 3cd/A in a very large luminance region from 100 to 55,000cd/m2.

Paper Details

Date Published: 13 June 2002
PDF: 5 pages
Proc. SPIE 4642, Organic Photonic Materials and Devices IV, (13 June 2002); doi: 10.1117/12.470443
Show Author Affiliations
Jingsong Huang, Technische Univ. Dresden (Germany)
Martin Pfeiffer, Technische Univ. Dresden (Germany)
Ansgar Werner, Technische Univ. Dresden (Germany)
Jan Blochwitz, Technische Univ. Dresden (Germany)
Karl Leo, Technische Univ. Dresden (Germany)
Shiyong Liu, Jilin Univ. (China)


Published in SPIE Proceedings Vol. 4642:
Organic Photonic Materials and Devices IV
Bernard Kippelen; Donal D. C. Bradley, Editor(s)

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