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Proceedings Paper

Optical pump-terahertz probe investigation of carrier relaxation in radiation-damaged silicon-on-sapphire
Author(s): Frank A. Hegmann; Kristine P.H. Lui
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Paper Abstract

We use an optical pump - terahertz probe technique to study relaxation dynamics of photoexcited carriers in semiconductors. The optical pump pulse (400/800 nm, 100 fs) from an amplified Ti:sapphire laser generates free carriers within the optical penetration depth of the semiconductor surface, and the transmission of the terahertz (THz) probe pulse is monitored as a function of delay time between pump and probe. In particular, we investigate carrier relaxation dynamics in radiation-damaged silicon-on-sapphire (RD-SOS). We measure pump-induced changes in the transmission of the amplitude of the THz pulse, which proves to be a valid technique for these low-mobility samples due to negligible phase shifts in the transmitted THz pulse. Using a simple thin-film Drude model, single-exponential relaxation times of 4 to 6 ps are observed and transient mobilities of about 420 cm2/Vs are obtained for moderately damaged RD-SOS> Picosecond carrier relaxation dynamics in high-implant-dose RD-SOS and sub-picosecond transients in amorphous silicon thin films are also observed.

Paper Details

Date Published: 11 June 2002
PDF: 11 pages
Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); doi: 10.1117/12.470433
Show Author Affiliations
Frank A. Hegmann, Univ. of Alberta (Canada)
Kristine P.H. Lui, Univ. of Alberta (Canada)


Published in SPIE Proceedings Vol. 4643:
Ultrafast Phenomena in Semiconductors VI
Kong-Thon F. Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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