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Proceedings Paper

Picosecond Raman studies of field-induced transient hole transport in an Al0.3Ga0.7As-based p-i-n nanostructure
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Paper Abstract

Electric field-induced transient hole transport in an Al0.3Ga0.7As-based p-i-n nanostructure has been studied by picosecond Raman spectroscopy at T=300K. Our experimental results demonstrate that at T=300K, for a 5-ps excitation laser pulse and a hole density of nhapproximately equals 5x1017cm-3, transient hole drift velocity increases from zero to approximately equals (3+/- 0.7)x106cm/sec when the applied electric field intensity increases from E=0 to 15 kV/cm. The transient hole drift velocity then becomes saturated at approximately equals (8+/- 0.8)x106cm/sec for the applied electric field intensity of E>=25 kV/cm and up to 65 kV/cm.

Paper Details

Date Published: 11 June 2002
PDF: 10 pages
Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); doi: 10.1117/12.470428
Show Author Affiliations
Y. Chen, Arizona State Univ. (United States)
Kong-Thon F. Tsen, Arizona State Univ. (United States)
Otto F. Sankey, Arizona State Univ. (United States)
David K. Ferry, Arizona State Univ. (United States)


Published in SPIE Proceedings Vol. 4643:
Ultrafast Phenomena in Semiconductors VI
Kong-Thon F. Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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