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Proceedings Paper

Terahertz emission from magnetoplasma oscillations in semiconductors
Author(s): James N. Heyman; H. Wrage; C. Lind; D. Hebert; P Neocleous; P. A. Crowell; T. Mueller; Karl Unterrainer
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Paper Abstract

Ultrafast terahertz spectroscopy can be used to probe charge and spin dynamics in semiconductors. We have studied THz emission from bulk InAs and GaAs and from GaAs/AlGaAs quantum wells as a function of magnetic field. Ultrashort pulses of THz radiation were produced at semiconductor surfaces by photoexcitation with a femtosecond Ti-Sapphire laser, and we recorded the THz emission spectrum and the integrated THz power as a function of magnetic field and temperature. In bulk samples the emitted radiation is produced by coupled cyclotron-plasma oscillations: we model THz emission from n-GaAs as magneto-plasma oscillations in a 3-D electron gas. THz emission from a modulation-doped parabolic quantum well is described in terms of coupled intersubband-cyclotron motion. A model including both 3-D plasma oscillations and a 2-D electron gas in a surface accumulation layer is required to describe THz emission from InAs in a magnetic field.

Paper Details

Date Published: 11 June 2002
PDF: 7 pages
Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); doi: 10.1117/12.470418
Show Author Affiliations
James N. Heyman, Macalester College (United States)
H. Wrage, Macalester College (United States)
C. Lind, Macalester College (United States)
D. Hebert, Macalester College (United States)
P Neocleous, Macalester College (United States)
P. A. Crowell, Univ. of Minnesota (United States)
T. Mueller, Technische Univ. of Vienna (Germany)
Karl Unterrainer, Technische Univ. of Vienna (Austria)


Published in SPIE Proceedings Vol. 4643:
Ultrafast Phenomena in Semiconductors VI
Kong-Thon F. Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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