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Proceedings Paper

Dynamic carrier relaxation in InGaN/GaN multiple quantum well structures
Author(s): Shih-Wei Feng; Yung-Chen Cheng; Yi-Yin Chung; Chih-Wen Liu; Ming-Hua Mao; Chih Chung Yang; Yen-Sheng Lin; Kung-Jeng Ma; Jen-Inn Chyi
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Paper Abstract

We report the fast and slow decay lifetimes of multi- component photoluminescence (PL) intensity decays in the time-resolved photoluminescence measurements at the room temperature and a low temperature (12K). The fast decay component was essentially due to carrier dynamics, that is, carrier transport from weakly localized to localized states. Such a carrier transport process results in extremely long PL decay time (up to almost 120 ns) for strongly localized states at the low temperature. At room temperature, because of thermal energy and hence carrier escape from strongly localized states, effective lifetimes becomes shorter.

Paper Details

Date Published: 11 June 2002
PDF: 4 pages
Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); doi: 10.1117/12.470417
Show Author Affiliations
Shih-Wei Feng, National Taiwan Univ. (Taiwan)
Yung-Chen Cheng, National Taiwan Univ. (Taiwan)
Yi-Yin Chung, National Taiwan Univ. (Taiwan)
Chih-Wen Liu, National Taiwan Univ. (Taiwan)
Ming-Hua Mao, National Taiwan Univ. (Taiwan)
Chih Chung Yang, National Taiwan Univ. (Taiwan)
Yen-Sheng Lin, Chung Cheng Institute of Technology (Taiwan)
Kung-Jeng Ma, Chung Cheng Institute of Technology (Taiwan)
Jen-Inn Chyi, National Central Univ. (Taiwan)

Published in SPIE Proceedings Vol. 4643:
Ultrafast Phenomena in Semiconductors VI
Kong-Thon F. Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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