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Proceedings Paper

Ultrafast relaxation of highly photoexcited electrons in AlN
Author(s): Mohamed A. Osman
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Paper Abstract

The ultrafast relaxation of photoexcited electrons in AlN has been investigated using ensemble Monte Carlo approach. The electrons are excited using infra-red laser pulses with energies ranging from 800 mev to 1000 meV above the conduction band edge at different excitation levels. The energy relaxation, valley population, the build-up and decay of the hot phonon distributions are examined. The strong polar optical phonon scattering rates coupled with the short lifetimes of A(LO) leads to quick decay of the hot phonon distributions. Additionally, the rapid electron-electron scattering leads to fast thermalization of the carrier distributions.

Paper Details

Date Published: 11 June 2002
PDF: 6 pages
Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); doi: 10.1117/12.470416
Show Author Affiliations
Mohamed A. Osman, Washington State Univ. (United States)

Published in SPIE Proceedings Vol. 4643:
Ultrafast Phenomena in Semiconductors VI
Kong-Thon F. Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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