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Proceedings Paper

Magnetic-field enhancement of terahertz emission from semiconductor surfaces: a comparison of experiment with semiclassical model
Author(s): Jie Shan; Carsten Weiss; Richard E. Wallenstein; Rene Beigang; Tony F. Heinz
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Paper Abstract

The possibility of strong enhancement of terahertz (THz) emission from photogenerated carriers in the surface depletion region of a semiconductor under the influence of external magnetic field has been well documented in the literature. We describe a simple theory to explain the key features of this phenomenon. The model is based on a combination of the Drude-Lorentz approximation for the carrier dynamics with an appropriate solution of the radiation problem. The magnetic-field enhancement of THz emission arises primarily form the increased radiation efficiency of transient currents flowing in the plane of the surface. The model provides quantitative agreement with experiment for the pronounced angular dependence of the enhancement and predicts the correct trend for degree of enhancement in a variety of semiconductors.

Paper Details

Date Published: 11 June 2002
PDF: 11 pages
Proc. SPIE 4643, Ultrafast Phenomena in Semiconductors VI, (11 June 2002); doi: 10.1117/12.470407
Show Author Affiliations
Jie Shan, Columbia Univ. (United States)
Carsten Weiss, Univ. Kaiserslautern (Germany)
Richard E. Wallenstein, Univ. Kaiserslautern (Germany)
Rene Beigang, Univ. Kaiserslautern (Germany)
Tony F. Heinz, Columbia Univ. (United States)


Published in SPIE Proceedings Vol. 4643:
Ultrafast Phenomena in Semiconductors VI
Kong-Thon F. Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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