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Proceedings Paper

Delineation of MEMS microstructures in silicon using CF4/O2 gas mixtures in reactive ion etching
Author(s): Ashok K. Paul; Ashok K. Dimri; Ram P. Bajpai
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Paper Abstract

Experiments performed in a reactive ion etching (RIE) system are discussed with the purpose of studying the influence of the addition of O2 in different ratios in the main CF4 gas flow for silicon etching. Conventional planer reactive ion etching system has been utilized for etching of SiO2 and silicon in fluorine chemistry. The patterns were delineated in SiO2 using photo-resist as the mask material using CHF3 gas in combination with argon. Sidewall passivation technique has been employed to achieve microstructure profile control in silicon. The quantity of O2 gas was varied from 2 to 10% in the total CF4 gas flow (10 sccm) at self dc-bias of -250 volts and process pressure 30 mTorr to achieve a balance between fluorine and oxygen radicals. Anisotropic etched profiles with smooth bottom surfaces were obtained at 2% O2 flow in CF4. The usefulness of this technique has been demonstrated for the delineation of MEMS microstructures in silicon.

Paper Details

Date Published: 13 November 2002
PDF: 5 pages
Proc. SPIE 4936, Nano- and Microtechnology: Materials, Processes, Packaging, and Systems, (13 November 2002); doi: 10.1117/12.469743
Show Author Affiliations
Ashok K. Paul, Central Scientific Instruments Organisation (India)
Ashok K. Dimri, Central Scientific Instruments Organisation (India)
Ram P. Bajpai, Central Scientific Instruments Organisation (India)

Published in SPIE Proceedings Vol. 4936:
Nano- and Microtechnology: Materials, Processes, Packaging, and Systems
Dinesh K. Sood; Ajay P. Malshe; Ryutaro Maeda, Editor(s)

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