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Proceedings Paper

Investigation of Pt/Ga2O3-ZnO/SiC Schottky-diode-based hydrocarbon gas sensors
Author(s): Adrian Trinchi; Yong Xing Li; Wojtek Wlodarski; Saulius Kaciulis; Luca Pandolfi; Sesto Viticoli
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Paper Abstract

Silicon carbide based metal-oxide-semiconductor (MOS) devices are attractive for gas sensing in harsh, high temperature environments. We present a novel hydrocarbon gas sensor based on a catalytic Metal-Reactive Insulator-Silicon Carbide (MRISiC) device. This sensor has been employed as a Schottky diode. The sensor presented is capable of operating at temperatures around 600°C. It has been exposed to propene gas, which lowers the barrier height of the diode. The MRISiC devices are based on semiconducting Ga2O3 - ZnO thin films prepared by the sol-gel process. The thin films were deposited onto the SiC by the spin coating technique and a Pt layer was deposited on the top of the metal oxide layer forming the Schottky barrier. The sensors responses were stable and repeatable towards propene at operating temperatures between 300 and 600°C. In this paper the effect of biasing is investigated by analyzing the output voltage of the diodes when biased at constant currents of 2 and 8 mA.

Paper Details

Date Published: 13 November 2002
PDF: 10 pages
Proc. SPIE 4936, Nano- and Microtechnology: Materials, Processes, Packaging, and Systems, (13 November 2002); doi: 10.1117/12.469674
Show Author Affiliations
Adrian Trinchi, RMIT Univ. (Australia)
Yong Xing Li, RMIT Univ. (Australia)
Wojtek Wlodarski, RMIT Univ. (Australia)
Saulius Kaciulis, Institute for the Study of Nanostructured Materials/CNR (Italy)
Luca Pandolfi, Institute for the Study of Nanostructured Materials/CNR (Italy)
Sesto Viticoli, Institute for the Study of Nanostructured Materials/CNR (Italy)


Published in SPIE Proceedings Vol. 4936:
Nano- and Microtechnology: Materials, Processes, Packaging, and Systems
Dinesh K. Sood; Ajay P. Malshe; Ryutaro Maeda, Editor(s)

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