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Proceedings Paper

Study for piezoelectricity characterization of PZT actuators deposited by RF magnetron sputtering for MEMS
Author(s): Kazuyoshi Tsuchiya; Toshiaki Kitagawa; Eiji Nakamachi
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Paper Abstract

Pb(Zr,Ti)O3 piezoelectric material(PZT) has been utilized for a microactuators or microsensors. Because PZT piezoelectric materials have higher power or larger displacement than the other piezoelectric materials such as BaTiO3. The PZT thin films were deposited onto a heated Invar alloy by using a high temperature RF magnetron sputtering. The chemical composition and the crystalline structure for deposited PZT were measured by ESCA and XRD, respectively. The chemical composition of PZT deposited stoichiometrically was almost same as the commercial based bulk PZT composition. Crystal planes (110) and (111) of PZT Perovskite structure were observed in XRD analysis. Employing over 600 degree heating, almost no pinhole on the surface was observed by SEM. Thin film actuator with 500 nm thickness has been also characterized by measuring the piezoelectric property using Laser Doppler Vibrograph. It was confirmed that the piezoelectric property has a linear relationship with the grain size, which also increased with the substrate temperature. Therefore, it is possible to control piezoelectric properties by the sizes of PZT grain, which is grown by heating substrate. The piezoelectric property of deposited PZT thin films showed a good agreement with a quoted value of bulk PZT, when the substrates were heated up at 600 degree.

Paper Details

Date Published: 13 November 2002
PDF: 9 pages
Proc. SPIE 4936, Nano- and Microtechnology: Materials, Processes, Packaging, and Systems, (13 November 2002); doi: 10.1117/12.469669
Show Author Affiliations
Kazuyoshi Tsuchiya, Osaka Institute of Technology (Japan)
Toshiaki Kitagawa, Osaka Institute of Technology (Japan)
Eiji Nakamachi, Osaka Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 4936:
Nano- and Microtechnology: Materials, Processes, Packaging, and Systems
Dinesh K. Sood; Ajay P. Malshe; Ryutaro Maeda, Editor(s)

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