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Proceedings Paper

Semiconductor lasers tunable from 1.3 um to 1.54 um for optical communication
Author(s): Yi-Shin Su; Ching-Fuh Lin; Di-Ku Yu; Bing-Ruey Wu
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Paper Abstract

Extremely broadband tunability of semiconductor lasers is achieved. The tuning range covers from 1300 nm to 1540 nm using nonidentical multiple quantum wells (MQWs) in the gain media. The broadband gain medium has two In0.53Ga0.47As quantum wells (Qws) near the n-cladding layer and three In0.67Ga0.33As0.72P0.28 Qws near the p-cladding layer. The sequence of the MQWs is also found to be very influential on the tuning range. For the sequence opposite to the above one, the tuning range is only from 1290 nm to 1450 nm. The reason is because the well sequence influences the carrier distribution. The broadband tunability is possible only when the QW structure could have a better uniformity of carrier distribution.

Paper Details

Date Published: 7 June 2002
PDF: 9 pages
Proc. SPIE 4653, WDM and Photonic Switching Devices for Network Applications III, (7 June 2002); doi: 10.1117/12.469638
Show Author Affiliations
Yi-Shin Su, National Taiwan Univ. (Taiwan)
Ching-Fuh Lin, National Taiwan Univ. (Taiwan)
Di-Ku Yu, National Taiwan Univ. (Taiwan)
Bing-Ruey Wu, Chunghua Telecom Co., Ltd. (Taiwan)

Published in SPIE Proceedings Vol. 4653:
WDM and Photonic Switching Devices for Network Applications III
Ray T. Chen; Joseph C. Chon, Editor(s)

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