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Proceedings Paper

In-situ x-ray reflectivity measurement of the interface roughness of tantalum pentoxide thin film during rf magnetron sputtering deposition
Author(s): Chih-Hao Lee; Tzu-Wen Huang; Hsin-Yi Lee; Yung-Wei Hsieh
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Paper Abstract

The real time change of surface morphology during the RF magnetron sputtering Ta2O5 films on Si substrates was studied by the fixed angle X-ray reflectivity measurement. During the early stage of polycrystalline Ta2O5 growth, the surface roughness change reveals a surface morphology of island nucleation and island coalescence processes. After the thickness of 7 nm, the surface roughness increases up to more than 2 nm at the thickness of 80 nm. For crystalline Ta2O5 films, the density of the sputtering Ta2O5 films was also increased and reaches the value of bulk value only when the thin film thicker than 80 nm. For the amorphous sputtering film, the surface roughness is smoother and density is smaller.

Paper Details

Date Published: 7 June 2002
PDF: 9 pages
Proc. SPIE 4703, Nondestructive Evaluation and Reliability of Micro- and Nanomaterial Systems, (7 June 2002); doi: 10.1117/12.469629
Show Author Affiliations
Chih-Hao Lee, National Tsing Hua Univ. (Taiwan)
Tzu-Wen Huang, National Tsing Hua Univ. (Taiwan)
Hsin-Yi Lee, Synchrotron Radiation Research Ctr. (Taiwan)
Yung-Wei Hsieh, Synchrotron Radiation Research Ctr. (Taiwan)

Published in SPIE Proceedings Vol. 4703:
Nondestructive Evaluation and Reliability of Micro- and Nanomaterial Systems
Norbert Meyendorf; George Y. Baaklini; Bernd Michel, Editor(s)

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