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Proceedings Paper

Development of high-average power picosecond laser systems
Author(s): David Burns; Gareth J. Valentine; W. Lubeigt; Erwin A. Bente; Allister I. Ferguson
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Paper Abstract

The use of semiconductor saturable absorbers has emerged as an enabling technology in modern passively modelocked laser systems. Their application to high power picosecond lasers, most notably Nd-doped lasers, has produced systems with average power levels of a few tens of watts. In this paper, the development of these laser systems to the 100W level and above will be outlined.

Paper Details

Date Published: 6 June 2002
PDF: 15 pages
Proc. SPIE 4629, Laser Resonators and Beam Control V, (6 June 2002); doi: 10.1117/12.469492
Show Author Affiliations
David Burns, Univ. of Strathclyde (United Kingdom)
Gareth J. Valentine, Univ. of Strathclyde (United Kingdom)
W. Lubeigt, Univ. of Strathclyde (United Kingdom)
Erwin A. Bente, Univ. of Strathclyde (United Kingdom)
Allister I. Ferguson, Univ. of Strathclyde (United Kingdom)


Published in SPIE Proceedings Vol. 4629:
Laser Resonators and Beam Control V
Alexis V. Kudryashov, Editor(s)

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