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Proceedings Paper

Pressure sensor based on a microstructure with dual silicon nitride vibrating beams
Author(s): Deyong Chen; Dafu Cui; Li Wang; Xiaotong Gao; Zhaoyan Fan
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Paper Abstract

This paper describes a resonant pressure sensor of a new structure which comprises two beams supported by only two rectangular piers. Both beams can be thermally excited into resonant vibration, whose resonant frequencies are differentially modulated by pressure loads, and the value of the applied pressure can then be obtained by measuring the resonant frequency of each beam. With thick silicon rich SiN film of low residual stress as mechanical vibrating beams, the sensor is fabricated from a single crystal silicon wafer, using porous silicon as a sacrificial layer. Computer simulation is carried out on temperature distribution, resonant frequency shift due to thermal stress, design of diaphragm geometry, and sensitivity of pressure measurement. Simulation results show that the novel structure improves the thermal stability and pressure sensitivity.

Paper Details

Date Published: 14 November 2002
PDF: 9 pages
Proc. SPIE 4935, Smart Structures, Devices, and Systems, (14 November 2002); doi: 10.1117/12.469410
Show Author Affiliations
Deyong Chen, Institute of Electronics (China)
Dafu Cui, Institute of Electronics (China)
Li Wang, Institute of Electronics (China)
Xiaotong Gao, Institute of Electronics (China)
Zhaoyan Fan, Institute of Electronics (China)

Published in SPIE Proceedings Vol. 4935:
Smart Structures, Devices, and Systems
Erol C. Harvey; Derek Abbott; Vijay K. Varadan, Editor(s)

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