Share Email Print

Proceedings Paper

Temperature characteristics of 1.16 um highly strained GaInAs/GaAs VCSELs
Author(s): Takashi Kondo; Masakazu Arai; Nobuhiko Nishiyama; Munechika Azuchi; Akihiro Matsutani; Tomoyuki Miyamoto; Fumio Koyama; Kenichi Iga
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We demonstrated highly strained GaInAs/GaAs QW VCSELs emitting at 1.16 micrometers . The fabricated device shows the record low threshold current density and high efficiency in 1.1-1.2 micrometers wavelength range. The VCSEL structure was monolithically grown on a (100) n-type GaAs substrate by a low-pressure metalorganic vapor phase epitaxy (MOVPE). The active region consists of triple 8 nm thick Ga0.64In0.36As TQWs separated by 25 nm GaAs barrier layers. The compressive strain of QWs is 2.3%. The threshold current is 3 mA for a 10micrometers ~10micrometers oxide device, corresponding to a threshold current density of 3 kA/cm2. We achieved the maximum output power of over 2 mW and a slope efficiency of 0.3 W/A at 25 degree(s)C, which are the record data for 1.2 micrometers band GaInAs VCSELs. The maximum CW operating temperature is 85 degree(s)C. The threshold current is almost constant in the temperature range of 20-70 degree(s)C which results from appropriate wavelength matching between gain peak and lasing mode. The temperature dependence of the lasing wavelength is 0.07 nm/K. We present the details of temperature characteristics of the fabricated VCSEL and discuss a possibility of uncooled GaInAs/GaAs VCSELs for high speed LANs.

Paper Details

Date Published: 4 June 2002
PDF: 11 pages
Proc. SPIE 4649, Vertical-Cavity Surface-Emitting Lasers VI, (4 June 2002); doi: 10.1117/12.469248
Show Author Affiliations
Takashi Kondo, Tokyo Institute of Technology (Japan)
Masakazu Arai, Tokyo Institute of Technology (Japan)
Nobuhiko Nishiyama, Tokyo Institute of Technology (Japan)
Munechika Azuchi, Tokyo Institute of Technology (Japan)
Akihiro Matsutani, Tokyo Institute of Technology (Japan)
Tomoyuki Miyamoto, Tokyo Institute of Technology (Japan)
Fumio Koyama, Tokyo Institute of Technology (Japan)
Kenichi Iga, Tokyo Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 4649:
Vertical-Cavity Surface-Emitting Lasers VI
Chun Lei; Sean P. Kilcoyne, Editor(s)

© SPIE. Terms of Use
Back to Top