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Proceedings Paper

Grating-outcoupled surface-emitting semiconductor lasers at 1310 and 1550 nm
Author(s): Gary A. Evans; Jay B. Kirk; Zuhair Hilali; N. V. Amarasinghe; Duy Phan; Gemunu Happawan; Bernard Dinkespiler; Taha Masood; Charles Davis
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Paper Abstract

Demonstration of a concept for a single-frequency, grating-outcoupled surface-emitting (GSE) semiconductor laser is reported at wavelengths of 1310 and 1550 nm with output powers exceeding 2 mW. First-order distributed Bragg reflector (DBR) gratings are used for feedback and a second-order grating provides surface emission. The device has a 6 x 10 micrometers outcoupling aperture that approximately matches the spot size of a single mode fiber. This architecture allows probe-testing at the wafer level similar to vertical cavity surface emitting lasers (VCSELs). These initial GSE lasers have demonstrated pulsed threshold currents of 42 mA at 1288 nm and 49 mA at 1552 nm with ~ 40 dB side-mode suppression ratios (SMSR).

Paper Details

Date Published: 4 June 2002
PDF: 5 pages
Proc. SPIE 4649, Vertical-Cavity Surface-Emitting Lasers VI, (4 June 2002); doi: 10.1117/12.469223
Show Author Affiliations
Gary A. Evans, Photodigm, Inc. and Southern Methodist Univ. (United States)
Jay B. Kirk, Photodigm, Inc. and Southern Methodist Univ. (United States)
Zuhair Hilali, Photodigm, Inc. and Southern Methodist Univ. (United States)
N. V. Amarasinghe, Photodigm, Inc. (United States)
Duy Phan, Photodigm, Inc. (United States)
Gemunu Happawan, Southern Methodist Univ. (United States)
Bernard Dinkespiler, Southern Methodist Univ. and Ctr. de Physiques des Particules de Marseille (France)
Taha Masood, Southern Methodist Univ. (United States)
Charles Davis, Photodigm, Inc. (United States)

Published in SPIE Proceedings Vol. 4649:
Vertical-Cavity Surface-Emitting Lasers VI
Chun Lei; Sean P. Kilcoyne, Editor(s)

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