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Proceedings Paper

Efficient InAlGaP light-emitting diodes using radial outcoupling taper
Author(s): Marcus Scherer; Barbara Neubert; Sven-Silvius Schad; Wolfgang Schmid; Christian Karnutsch; Walter Wegleiter; Andreas Ploessl; Klaus P. Streubel
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Paper Abstract

We present results on efficient InGaAlP light-emitting diodes using lateral outcoupling taper. This concept is based on light generation in the very central area of a circularly symmetric structure and, after light propagation between two mirrors, outcoupling in a tapered mesa region. We have demonstrated the suitability of this concept on As-based Light-Emitting Diodes emitting at 980 nm. Since the idea is not limited to a certain material system, we fabricated InGaAlP-based LEDs emitting in the red wavelength regime. By adjusting the process flow to the new material system we were able to achieve external quantum efficiencies in the range of 13% for unencapsulated devices. Additionally we present a new concept combining the idea of outcoupling tapers with a waferscale soldering technique. First samples show external quantum efficiencies in the range of 11%.

Paper Details

Date Published: 6 June 2002
PDF: 11 pages
Proc. SPIE 4641, Light-Emitting Diodes: Research, Manufacturing, and Applications VI, (6 June 2002); doi: 10.1117/12.469214
Show Author Affiliations
Marcus Scherer, Univ. of Ulm (Germany)
Barbara Neubert, Univ. of Ulm (Germany)
Sven-Silvius Schad, Univ. of Ulm (Germany)
Wolfgang Schmid, OSRAM Opto Semiconductors GmbH (Germany)
Christian Karnutsch, OSRAM Opto Semiconductors GmbH (Germany)
Walter Wegleiter, OSRAM Opto Semiconductors GmbH (Germany)
Andreas Ploessl, OSRAM Opto Semiconductors GmbH (Germany)
Klaus P. Streubel, OSRAM Opto Semiconductors GmbH (Germany)


Published in SPIE Proceedings Vol. 4641:
Light-Emitting Diodes: Research, Manufacturing, and Applications VI
E. Fred Schubert; H. Walter Yao, Editor(s)

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