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Proceedings Paper

Surface treatment and passivation of III-nitride LEDs
Author(s): Ching-Ting M. Lee; Yow-Jon Lin
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Paper Abstract

For the fabrication of III-nitride LEDs, the surface treatment and passivation using (NH4)2Sx solution were investigated. Using x-ray photoelectron spectroscopy (XPS) analysis, we found that the original native oxide on the III-nitride surface was effectively removed by the NH4)2Sx solution. Furthermore, the Ga-S bonds and the occupation of nitrogen-related vacancies by the sulfur allowed a more stable and a lower surface state density. By using capacitance-voltage and photoluminescence measurements, we investigate the Schottky barrier height and surface state density of the (NH4)2Sx-treated III-nitride layers. The reduction of the surface state density is due to the formation of Ga-S bonds. To improve the ohmic performance, the preoxidation process was used before (NH4)2Sx treatment. The oxidation mechanism was investigated. The interfacial mechanism in ohmic metals contact to (NH4)2Sx- treated III-nitride layers was investigated. The function of the (NH4)2Sx treatment was analyzed.

Paper Details

Date Published: 6 June 2002
PDF: 9 pages
Proc. SPIE 4641, Light-Emitting Diodes: Research, Manufacturing, and Applications VI, (6 June 2002); doi: 10.1117/12.469206
Show Author Affiliations
Ching-Ting M. Lee, National Central Univ. (Taiwan)
Yow-Jon Lin, National Central Univ. (Taiwan)

Published in SPIE Proceedings Vol. 4641:
Light-Emitting Diodes: Research, Manufacturing, and Applications VI
E. Fred Schubert; H. Walter Yao, Editor(s)

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