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Proceedings Paper

Magnetostrictive characteristics of Tb-Fe-Si thin films prepared by magnetron sputtering
Author(s): Mitsuaki Takeuchi; Yoshihito Matsumura; Hirohisa Uchida; Toshiro Kuji
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Paper Abstract

Giant magnetostrictive (GM) Tb-Fe-Si films were prepared by magnetron sputtering system. X-ray diffraction pattern showed film samples were in amorphous state. The Tb-Fe-Si film (Tb : Fe : Si = 1 : 2.7 : 0.2) prepared at 373 K showed 30 MPa tensile stresses generated by magnetostriction along in-plane direction. The film sample showed about 4.3 μΩm of electrical resistivity that is about 100 times larger than that of TbFe2 film shown about 5.9 × 10-2 μΩm. The film sample coercivity was 360 Oe. Magnetization of the film sample at 15 kOe of applied magnetic field in parallel direction to the film surface exhibited 81.0 emu/cc. We prepared giant magnetostrictive thin film with higher electrical resistivity than that of TbFe2 thin film.

Paper Details

Date Published: 13 November 2002
PDF: 8 pages
Proc. SPIE 4934, Smart Materials II, (13 November 2002); doi: 10.1117/12.469172
Show Author Affiliations
Mitsuaki Takeuchi, Tokai Univ. (Japan)
Yoshihito Matsumura, Tokai Univ. (Japan)
Hirohisa Uchida, Tokai Univ. (Japan)
Toshiro Kuji, Mitsui Mining and Smelting Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 4934:
Smart Materials II
Alan R. Wilson, Editor(s)

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