Share Email Print
cover

Proceedings Paper

Short x-ray pulse generation towards time-resolved spectroscopy
Author(s): Naoshi Uesugi; Hidetoshi Nakano; Tadashi Nisikawa; Katsuya Oguri
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The soft x-ray generation properties for both flat targets and structured targets such as nanohole-alumina and Au- nanocylinder are evaluated. The experimental results for flat metal targets have revealed the fundamental properties of soft x-ray such as broadband continuum spectra and short pulse duration of less than 3 ps. By adopting structured targets such as nanohole-alumina and Au-nanocylinder targets, a more than 30 fold enhancement of x-ray generation yield is achieved compared with that for flat targets of the same materials with a slight increase of pulse duration, less than 20 ps. Then, the duration of soft x-ray pulse from femtosecond (fs) laser produced W plasma was measured by using cross-correlation method. In the experiment, we measured the transmission spectra of short soft x-ray pulse produced by main fs optical pulses through ionized Kr gas by probe fs optical pulses as a function of the time delay between main and probe fs optical pulses. The pulse duration of 4 ps was observed for soft x-ray at 15.6 nm of W plasma. The time-resolved measurement of the inner-shell absorption change of Si during the irradiation with a high-intensity fs optical pulse is achieved by using a picosecond soft x-ray pulse as a probe pulse in pump-probe experiments. A more than 5% increase in the absorption of Si membrane at near the LII,III edge (around 100 eV) was observed. The recovery time of the absorption change was measured to be about 20 ps. From these experimental results, this absorption change is assumed to be the bandgap renormalization of Si.

Paper Details

Date Published: 29 May 2002
PDF: 10 pages
Proc. SPIE 4752, ICONO 2001: Ultrafast Phenomena and Strong Laser Fields, (29 May 2002); doi: 10.1117/12.469111
Show Author Affiliations
Naoshi Uesugi, Tohoku Institute of Technology (Japan)
Hidetoshi Nakano, NTT Basic Research Labs. (Japan)
Tadashi Nisikawa, NTT Basic Research Labs. (Japan)
Katsuya Oguri, NTT Basic Research Labs. (Japan)


Published in SPIE Proceedings Vol. 4752:
ICONO 2001: Ultrafast Phenomena and Strong Laser Fields

© SPIE. Terms of Use
Back to Top