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Proceedings Paper

Comparison of LDD and double-gate MOSFET for nanoscale devices
Author(s): Suk-woong Ko; Jae-hong Kim; Hak-kee Jung
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Paper Abstract

In short channel MOSFETs (metal oxide semiconductor field effect transistors), the effective channel length can be substantially shortened, leading to a slope in the saturated I-V characteristic that is analogous to the Early effect for BJT. These SCE(short channel effect) problems have been solved using the LDD(lightly doped drain) structure, but can't be completely solved at nano scale gate. To complete weakness of LDD, we have designed the MOSFET which has the DG(double gate) structure. For comparing LDD with DG MOSFETs, we have used the TCAD simulator. The structures of LDD and DG MOSFETs have been designed and simulated by the DIOS tool and the electrical characteristics simulated by the DESSIS tool in TCAD. The I-V characteristic is not good in LDD but it is very excellent in DG MOSFET of sub-50nm gate.

Paper Details

Date Published: 14 November 2002
PDF: 9 pages
Proc. SPIE 4935, Smart Structures, Devices, and Systems, (14 November 2002); doi: 10.1117/12.469068
Show Author Affiliations
Suk-woong Ko, Kunsan National Univ. (South Korea)
Jae-hong Kim, Kunsan National Univ. (South Korea)
Hak-kee Jung, Kunsan National Univ. (South Korea)


Published in SPIE Proceedings Vol. 4935:
Smart Structures, Devices, and Systems
Erol C. Harvey; Derek Abbott; Vijay K. Varadan, Editor(s)

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