Share Email Print
cover

Proceedings Paper

Semiconductor nanostructures for quantum wire lasers
Author(s): D. Piester; A. A. Ivanov; A. S. Bakin; H.-H Wehmann; Andreas Schlachetzki
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We report on the improvements of an InGaAs/InP quantum wire (QWR) laser leading to a new concept of a single QWR laser. Its index/gain guiding structure consists of a vertical waveguide in combination with a laterally patterned semi- insulating current blocking layer with an additional oxide layer, which is realized by a simple self-aligning sub-micrometers lithography step. A further improvement of the structure is possible by reducing the thickness of InP buffer layers, which were necessary due to technological reasons. One InP buffer layer may be omitted completely by increasing the growth temperature from 600 degree(s)C to 640 degree(s)C. By employing metal-organic vapor-phase epitaxy we found a significant increase of In-content of the QWRs at the raised temperature.

Paper Details

Date Published: 29 May 2002
PDF: 10 pages
Proc. SPIE 4748, ICONO 2001: Fundamental Aspects of Laser-Matter Interaction and Physics of Nanostructures, (29 May 2002); doi: 10.1117/12.468991
Show Author Affiliations
D. Piester, Technische Univ. Carolo-Wilhelmina zu Braunschweig (Germany)
A. A. Ivanov, Photochemistry Ctr. (Russia)
A. S. Bakin, Technische Univ. Carolo-Wilhelmina zu Braunschweig (Germany)
H.-H Wehmann, Technische Univ. Carolo-Wilhelmina zu Braunschweig (Germany)
Andreas Schlachetzki, Technische Univ. Carolo-Wilhelmina zu Braunschweig (Germany)


Published in SPIE Proceedings Vol. 4748:
ICONO 2001: Fundamental Aspects of Laser-Matter Interaction and Physics of Nanostructures

© SPIE. Terms of Use
Back to Top