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Proceedings Paper

Defect-induced nanometer-scale surface melting and strong optical nonlinearity of Ga below the melting point
Author(s): Vladimir I. Emel'yanov
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Paper Abstract

The theory of nanoscale surface melting induced by long range screened defect-defect interactions is developed. The thickness of quasiliquid surface layer is shown to be an exponential function of temperature detuning from the melting point in accordance with the empirical dependence. Obtained results justify the modeling of observed strong nonlinear optical response of alpha-Ga films and single crystals below the melting point in terms of laser-induced nonthermal nanoscale surface melting.

Paper Details

Date Published: 29 May 2002
PDF: 8 pages
Proc. SPIE 4748, ICONO 2001: Fundamental Aspects of Laser-Matter Interaction and Physics of Nanostructures, (29 May 2002); doi: 10.1117/12.468976
Show Author Affiliations
Vladimir I. Emel'yanov, M.V. Lomonosov Moscow State Univ. (Russia)


Published in SPIE Proceedings Vol. 4748:
ICONO 2001: Fundamental Aspects of Laser-Matter Interaction and Physics of Nanostructures

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