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Proceedings Paper

Applications of the FEL to NLO spectroscopy of semiconductors
Author(s): Carl R. Pidgeon
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Paper Abstract

A short review is presented of some present and possible future applications of free electron lasers (FELs) to the study of nonlinear optical (NLO) properties of condensed matter in the infrared spectral region. Emphasis is put on semiconductors, and in particular GaAs and related III-V systems, and recent work on organic semiconductors. Suggestions are also given for experiments in Ge and narrow gap semiconductors such as InSb and HgCdTe. The desirable (or, in some cases, essential) properties of the FEL for the particular experiment are emphasized. The following topics are addressed: bandgap (single and multiphoton) resonant processes; photoionization kinetics of semiconductors; the FEL as probe for far infrared (FIR) gain measurement; FIR second harmonic generation and nonlinear optics. For convenience these are taken in spectral order from the near and mid-infrared (mainly linac-based FEL) to FIR (mainly Van de Graaff-based FEL) applications.

Paper Details

Date Published: 1 October 1991
PDF: 5 pages
Proc. SPIE 1501, Advanced Laser Concepts and Applications, (1 October 1991); doi: 10.1117/12.46874
Show Author Affiliations
Carl R. Pidgeon, Heriot-Watt Univ. (United Kingdom)

Published in SPIE Proceedings Vol. 1501:
Advanced Laser Concepts and Applications
Sidney Singer, Editor(s)

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