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Optical feedback dependence of laser diode relative intensity noise
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Paper Abstract

The relative intensity noise (RIN) of a semiconductor laser subject to optical feedback ahs been experimentally studied. At low bias current, a low RIN is observed with low feedback ration, the RIN increased in the coherence collapse regime (regime IV) and decreased in regime V. The RIN in regime V is lower than that of the solitary laser. The measurements are found to be in good qualitative and quantitative agreement with theoretical predictions. For higher bias current, a higher feedback ratio is needed for the semiconductor laser to transit from regime IV to V.

Paper Details

Date Published: 11 March 2003
PDF: 8 pages
Proc. SPIE 4947, Laser Diodes, Optoelectronic Devices, and Heterogenous Integration, (11 March 2003); doi: 10.1117/12.468632
Show Author Affiliations
Yanhau Hong, Univ. of Wales (United Kingdom)
Sujit Bandyopadhyay, Univ. of Wales (United Kingdom)
Siva Sivaprakasam, Univ. of Wales (United Kingdom)
Paul S. Spencer, Univ. of Wales (United Kingdom)
Keith Alan Shore, Univ. of Wales (United Kingdom)

Published in SPIE Proceedings Vol. 4947:
Laser Diodes, Optoelectronic Devices, and Heterogenous Integration
John Gerard McInerney; Alfred Driessen; Roel G. Baets; Ephraim Suhir, Editor(s)

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